| 專著名称: | AIP Conference Proceedings |
| 研究中心: | |
| 首席研究員: | |
| 主編單位: | AIP Conference Proceedings |
| 出版時間: | 2012-06-25 |
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| 編寫人員: | 劉明 |
| 總字數: | |
| 編者字數: | |
| 著作性質: | 電子、通信與自動控制技術 |
| 編輯出版單位: | AIP Conference Proceedings |
| 出版資助單位: | |
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| 參編內容: | Si/Al離子注入HfO2器件的阻變特性 |
| 著作簡介: | The effects of Si and Al ion implantation on the resistive switching properties of a HfO2-based resistive random access memory (RRAM) device are investigated. Testing results demonstrate that Si or Al implantation into HfO2 films results in reduced electroforming voltages and improves reproducibility of resistive switching over 1,000 cycles as measured by a DC voltage sweeping method. Furthermore, the Si or Al implantation into HfO2 resistive switching memory devices was found to improve device yields, reduce operating voltages and their variability, expand on/off resistance ratio (>103 for Al-doped, > 500 for Si-doped), and increase retention times (>3 × 105 s at room temperature). Doping by Si or Al ion is suggested to improve the formation of conducting filaments in HfO2 matrix and thus improve the performances of the Pt/Ti/HfO2/Pt device. |
| 其它備注: | 國外出版-外文 |
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