| 專著名称: | ICEPT&HDP 2012 |
| 研究中心: | |
| 首席研究員: | |
| 主編單位: | ICEPT&HDP 2012 |
| 出版時間: | 2012-08-14 |
| 出版社: | |
| 主編: | |
| 編寫人員: | 宋崇申 |
| 總字數: | |
| 編者字數: | |
| 著作性質: | 微電子學 |
| 編輯出版單位: | ICEPT&HDP 2012 |
| 出版資助單位: | |
| 再版次數: | |
| 印刷數量: | |
| 參編內容: | 銅TSV引入的熱機械應力及其對襯底上器件性能的影響分析 |
| 著作簡介: | 3D integration using TSVs is a promising method to achieve further improvements for future electronic systems. Stress is induced in silicon near the TSV by CTE mismatch between filling copper and Silicon substrate. When the substrate is an active one, this stress will influence the performance of the devices fabricated therein. To understand the induced stress and its impact on device performance deeply, this paper gives a comprehensive study. Orthotropic feature of silicon is considered to calculate the stress profile in silicon in vicinity of the Cu TSV. The saturation drain current variation of MOSFETs is calculated from the simulated stress data using piezoelectric effect theory. The results can well match the reported measuring data, giving an effective method to deeply understand the TSV induced stress and its impact on device performance. |
| 其它備注: | 國外出版-外文 |
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