2009年2月，制作完成一台內徑350毫米的二氧化碳超臨界流體工藝平台，該平台能進行清洗，HPCVD，高速無等離子體刻蝕和矽片三維加工和納米管內部鍍膜技術,是一台多功能創新型技術設備。
參加國家863重大專項，危化品檢測與跟蹤網絡化系統集成及産業化應用技術。傳感器電學參數測試子課題負責人。參與863國家重大專項（01、02），32nm以下設備關鍵技術研究及創新設備技術探索，二氧化碳超臨界流體半導體清洗技術負責人。
1. Quantitative Analysis and Influence of CO2 Absorbed in TMAH solution for Silicon Etching
Yupeng Jing, Kazusuke Maenaka, Hiroshi Nishioka, Sunao Ioku, Takayuki Fujita and Yoichiro Takayama.
Pp79-84, IEEJ, Sensor micromachine volume 123, March 2003
2. Anisotropic Etching on Si (110) Plane Using Iodine Added KOH Solution, Yupeng Jing, Kazusuke Maenaka, Takayuki Fujita and Yoichiro Takayama, Proceedings of the 20th Sensor Symposium on Sensors, Micromachines and Applied systems, 2003
3. Y. Jing, K. Maenaka, H. Nishioka, S. Ioku, T. Fujita and Y. Takayama，“Monitoring Methods for TMAH Deterioration in Etching Characteristics”,Pacific Rim Workshop on Transducer and Micro/Nano Technologies, Xiamen, China, MN-15, pp．83-86, July, 2002．
4．Yupeng Jing, Kazusuke Maenaka, Takayuki Fujita, Yoichiro Takayama“Anisotropy of Silicon Etching in Neutralized TMAH”, 3rd Workshop on Physical Chemistry of Wet Etching of Silicon, Nara, Japan, pp.62-65, June, 2002
5. Gao Chaoqun, Jiao Binbin, Liu Maozhe, Li Quanbao, Yangkai, Shi Shali, Li Zhigang, Ou Yi, Jing Yupeng, Chen Dapeng, “MEMS/CMOS Compatibil Gas Sensors Based on Spectroscopy Analysis” JOURNAL OF SEMICONDUCTORS (半导体学报)，Vol.29 No.10,.pp.142-148. Oct.,2008
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