教育背景：
2008年8月–2012年5月，法國裏昂國立應用科學院，電力電子學與微電子學，博士
2005年9月–2008年1月，北京交通大學，微電子學與固體電子學，碩士
2001年9月–2005年7月，北京交通大學，電子工程系，本科
工作簡曆：
2020年7月-至今，中國科學院微电子研究所，硅器件与集成研发中心，中國科學院硅器件技术重点实验室，研究員
2016年1月-2020年6月，中國科學院微电子研究所，硅器件与集成研发中心，中國科學院硅器件技术重点实验室，项目研究員，副研究員，课题组长，研究生辅导员，支部青年委员
2016年6月-2016年9月，法國國家科學院，法國裏昂國立應用科學院，期間訪問學者
2012年10月-2016年1月，中國科學院微电子研究所，硅器件与集成研发中心，助理研究員
中國科學院硅器件技术重点实验室，学术秘书
中國科學院青年创新促进会，会员
《現代應用物理》，青年編委
國家自然科學基金，評議人
中國核學會輻射物理分會，會員
全國微電子研究生學術論壇技術委員會，委員
IEEE Member
20余本國內外高水平期刊審稿人
1. 國家自然科學基金面上項目，61874135，堆疊納米線圍柵器件的輻射損傷機理及在線增強自修複機制研究，2019-01至2022-12，66萬元，在研，主持
2. 國家自然科學基金委員會與俄羅斯基礎研究基金會合作交流項目，62011530040，納米級半導體器件的綜合輻射效應研究，2020-01至2021-12，14.46萬元，在研，主持
3. 中國科學院特别交流计划项目，新型半导体器件的综合辐射效应研究，2019-12至2021-12，10萬元，在研，主持
4. 中國科學院微电子所所长基金，新一代材料与器件，2019-01至2019-12，150萬元，已結題，主持
5. 中國科學院青年创新促进会会员，2016113，2016-01至2019-12，80萬元，已結題，主持
6. 中國科學院基础前沿科学研究计划从0到1原始創新項目，ZDBS-LY-JSC015，晶圓級單晶二維層狀半導體材料制備及相關高性能異質結構器件集成，2019-09至2024-08，300萬元，在研，參與
7. 國家自然科學基金委員會中德科學中心項目，GZ1598，工業工程中的不確定性量化問題，2019-12，已結題，參與
8. 中國國家留學基金委，中法“蔡元培”交流合作項目，2014-01至2016-12，10万元，已結題，參與
期刊論文
1. 張峰源, 李博, 劉凡宇, et al. FinFET 器件總劑量效應研究進展[J]. 微電子學, 2020.
2. 張峰源, 劉凡宇, 李博, et al. 考慮背柵偏置的FOI FinFET 電流模型[J]. 半導體技術, 2020.
3. Lu, B.; Li, B.*; Huo, J.; Chen, Y.; Zhao, W.; Gao, J.; Wang, C.; Liu, H.; Luo, J. & Zhou, Y. Design and Characterizations of the Radiation-Hardened XCR4C ASIC for X-ray CCDs for Space Astronomical Applications, IEEE Transactions on Nuclear Science, 2020, 1-1, Accepted.
4. Yu-Dong Li, Qing-Zhu Zhang, Fan-Yu Liu*, Zhao-Hao Zhang, Feng-Yuan Zhang, Hong-Bin Zhao, Bo Li*, Jiang Yan, X-ray irradiation induced degradation in Hf0.5Zr0.5O2 FDSOI nMOSFETs, RARE METALS, 2020, Accepted.
5. Wang, L., Liu, N., Li, B.*, et al. Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light Emitting Diodes, IEEE Transactions on Nuclear Science, 2020, 1-1, Accepted.
6. Lei Wang, Bo Li*, et al, Mechanism Analysis of Proton Irradiation Induced Increase of 3dB Bandwidth of GaN-based Micro Light Emitting Diodes for Space Light Communication, IEEE Transactions on Nuclear Science, 2020,1-1, Accepted.
7. 王磊，李博，張學文，李彬鴻，鄭中山，崔岩，羅家�。n鄭生，劉新宇，袁清習，X射線和重離子輻射對GaN基發光二極管光學特性的影響，微處理機，06-0001-05，1002-2279，2019.
8. Ningyang Liu, Qiao Wang, Bo Li, et al, Point-Defect Distribution and Transformation Near the Surfaces of AlGaN Films Grown by MOCVD, The Journal of Physical Chemistry C, 2019 123 (14), 8865-8870.
9. Li, Q., Li, B., Wang, L.*, Zheng, Z., Zhang, B.*, Liu, N.*, ... & Chen, Z. (2019). Comparison of 10 MeV Electron Beam Radiation Effect on InGaN/GaN and GaN/AlGaN Multiple Quantum Wells. Journal of Luminescence. 210, 2019, 169-174.
10. Zhang, G., Yang, J., Jiang, P., Bu, J., Li, B., & Li, B. (2018). Modeling the threshold voltage variation induced by channel random dopant fluctuation in fully depleted silicon-on-insulator MOSFETs. Japanese Journal of Applied Physics, 57(10), 104201.
11. Jing Zhang, Xi Chen, Lei Wang, Zhongshan Zheng*, Huiping Zhu*, Bo Li*, Jinatou Gao, Duoli Li, Jiajun Luo, Zhengsheng Han, Xinyu Liu, Studies of radiation effects in Al2O3-based metal-oxide-semiconductor structures induced by Si heavy ions[J]. Journal of Applied Physics, 2019, 125(11): 115701.
12. Zhu, H. P., Zheng, Z. S.*, Li, B.*, Li, B. H., Zhang, G. P., Li, D. L., ... & Luo, J. J. (2018). Total dose effect of Al2O3-based metal–oxide–semiconductor structures and its mechanism under gamma-ray irradiation. Semiconductor Science and Technology, 33(11), 115010.
13. B. Li*, Y.-B. Huang, L. Yang, Q.-Z. Zhang, Z.-S. Zheng, B.-H. Li, H.-P. Zhu, J.-H. Bu, H.-X. Yin, J.-J. Luo, Z.-S. Han, H.-B. Wang, Process variation dependence of total ionizing dose effects in bulk nFinFETs, Microelectronics Reliability, 88–90, 2018, 946-951.
14. B. Li, Y. Huang, J. Wu*, Y. Huang, B. Li, Q. Zhang, L. Yang, F. Wan, J. Luo, Z. Han, H. Yin, Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment, Microelectronics Reliability, 88–90, 2018, 969-973.
15. 黃雲波, 李博, 楊玲, 韓鄭生, 羅家俊, 極端低溫下SiGe HBT器件研究進展, 微電子學, 2017.10.20, (05): 695~700.
16. Huang, Y.*; Li, B.*; Zhao, X.; Zheng, Z.; Gao, J.; Zhang, G.; Li, B.*; Zhang, G.; Tang, K.; Han, Z. & Luo, J.*, An Effective Method to Compensate Total Ionizing Dose-Induced Degradation on Double-SOI Structure, IEEE Transactions on Nuclear Science, 2018, 65, 1532-1539.
17. Yang, L.*; Zhang, Q.; Huang, Y.; Zheng, Z.*; Li, B.*; Li, B.; Zhang, X.; Zhu, H.; Yin, H.*; Guo, Q.; Luo, J. & Han, Z., Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation, IEEE Transactions on Nuclear Science, 2018, 65, 1503-1510.
18. Wang, L.*; Liu, N.; Song, L.; Li, B.*; Liu, Y.*; Cui, Y.; Li, B.; Zheng, Z.; Chen,* Z.; Gong, Z.; Zhao, W.; Cao, X.; Wang, B.; Luo, J. & Han, Z., Multiple Angle Analysis of 30-MeV Silicon Ion Beam Radiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light-Emitting Diodes, IEEE Transactions on Nuclear Science, 2018, 65, 2784-2792.
19. Xiu, L., Zhang, W., Li, B.*, & Sun, Y. (2018). A digital dual-modulation control for single-phase UPS inverters. International Journal of Electronics, 105(11), 1900-1915.
20. Cui, Y., Zhu, H., Wang, L., Li, B., Han, Z., & Luo, J.* (2018). A new type of magnetism-controllable Mn-based single-molecule magnet. Journal of Magnetism and Magnetic Materials, 458, 90-94.
21. Cui Yan, Yang Ling, Gao Teng, Li Bo, Luo Jia-Jun. Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices. Chinese Physics B, 2017, 26(8): 087501.
22. Bingqing Xie, Bo Li, Jinshun Bi, Jianhui Bu, Chi Wu, Binhong Li, Zhengsheng Han, Jiajun Luo. Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices. Chinese Physics B,, 2016, 25(7):078501.
23. J. W. Zhang, C. Yin, C. Song, R. Liu and Bo Li*, Numerical simulation and experiments on mono-polar negative corona discharge applied in nanocomposites, IEEE Transactions on Dielectrics and Electrical Insulation, 2017, 24(2): 791-797.
24. 王典，李博，赵宇红，李彬鸿，羅家�。盅┓�，阿拉·布鲁诺，应用于Buck電路的滑模算法研究，微電子學，2017，47(04)：557-561.
25.王典，李博*，赵宇红，李彬鸿，羅家俊，林雪芳，阿拉·布鲁诺，应用于Buck電路的滑模算法研究，微電子學，2017，47(04)：557-561.
26. Limei Xiu, Weiping Zhang, Bo Li*, and Yuansheng Liu, Digital Controller Candidate for Point-of-load Synchronous Buck Converter in Tri-mode Mechanism, Journal of Power Electronics, vol.14, no.4, 796-805, 2014.
27. 解冰清，畢津順，李博，羅家�。瑯O端低溫下硅基器件和电路特性研究进展，微電子學，2015.
28.鮑進華，李博，曾传滨，高林春，毕津顺，刘海南，羅家�。嗷访舾心？榈牡チＷ有вτ肷杓萍庸�[J]，半導體技術，2015，07：547-553.
29. 鮑進華，吕荫学，李博，曾传滨，毕津顺，羅家�。恢只诒曜�CMOS工藝實現的鎖相環電路[J]，電子設計工程，2015.
30. Bo Li, Xuefang Lin-Shi, Allard, B., Retif, J.-M., A Digital Dual-State-Variable Predictive Controller for High Switching Frequency Buck Converter With Improved Sigma-Delta DPWM, IEEE Transactions on Industrial Informatics, vol.8, no.3, 472-481, 2012.
31. Bo Li, Xuefang Lin-Shi, Bruno Allard, Low Power Digital Alternative to Analog Control of Step-Down Converter, Journal of Low Power Electronics, vol.8, no.5, 654-666, 2012.
会议論文
1. Xiaoting Shan, Yun Sun, Meng Xun, Jie Liu, Fazhan Zhao, Bo Li*, Lei Wang, et al, Radiation Effects on the Static and Dynamic Characteristics of 850 nm 10 GHz GaAs Based Vertical Cavity Surface Emitting Lasers, NSREC2020.
2. Junjun Zhang, Fanyu Liu, Bo Li*, Binhong Li, Yang Huang, Can Yang, Guoqing Wang, Rongwei Wang, Jiajun Luo and Zhengsheng Han, Temperature dependence of single event upset for monolithic 3-D integrated 6T SRAM based on a 22 nm FD-SOI technology, ESREF 2020.
3. Zhian WANG, Binhong LI, Jianfei WU, Wenxin ZHAO, Bo LI, Hainan LIU, Jiajun LUO, Tianchun YE, Study on electromagnetic susceptibility of current reference circuits with different feature sizes and structures, ESREF 2020.
4. GQ. Wang, FY. Liu, B. Li*, Y. Huang, YC. CN. Wu, JM. Zhang, JJ. Luo, ZS. Han, S. Cristoloveanu, Revisited parasitic bipolar effect in FDSOI MOSFETs: mechanism, gain extraction and circuit applications, Euro-SOI 2020.
5. X. Zhang, FY. Liu, B. Li*, JJ. Luo, ZS. Han, M. Arsalan, J. Wan, S. Cristoloveanu, Pseudo-MOSFET transient behavior: experiments, model and substrate effect, Euro-SOI 2020.
6. Wang, L., Li, B.*, Wang, J., Guan, X., Zhang, X., Liu, N., Gong, Z., Wei, Z., Zhu, H., Liu, N., Li, B., Gao, J., Huang, Y.; Liu, M., Yang, J., Li, X., Luo, J., Han, Z, Liu, X., Proton Irradiation Effects on the Static and Dynamic Characteristics of GaN-based Blue Light Emitting Diodes for Space Light Communication, Radiation and its Effects on Components and Systems (RADECS), 2019, France.
7. Wang, L., Li, B.*, Zhang, X., Liu, N., Yuan, Q., Liu, N., Liu, M., Li, B., Gao, J., Huang, Y., Yang, J., Li, X., Luo, J., Han, Z, Liu, X., Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light Emitting Diodes, Radiation and its Effects on Components and Systems (RADECS), 2019, France.
8. Li, B., Lu, B., Jia, H., Chen, Y., Wei, W., Zhang, F., Su, Z., Gao, J., Wang, C., Zhao, W., Liu, H., Towards a Characterization of Vulnerability of XCR4C ASIC on Heavy-Ion Induced Transient Events, Radiation and its Effects on Components and Systems (RADECS), 2019, France.
9. Xiong, G., Qin, Z., Zhu, H., Zhao, S., Wang, L., Li, B.*, Zhang, X., Zheng, Z., Gao J., Yang J., Li X., Li B., Huang, Y., Luo, J., Han, Z., Liu, X., Mechanism of transient inverse pulse current in hybrid perovskite photodetector induced by proton beam irradiation, Radiation and its Effects on Components and Systems (RADECS), 2019, France.
10. Zhu, H., Wang, L., Shi, J., Huang, X., Zheng, Z., Xiong, G., Li, B.*, Gao, Q., Yang, B., Luo, J., Han, Z., Liu, X., Impact of High-Energy Proton Irradiation on MoS2 Films and Its Field Effect Transistors, Radiation and its Effects on Components and Systems (RADECS), 2019, France.
11. Huang, Y., Liu, F., Li, B., Li, B.*, Gao, J., Wang, L., Su, X., Liu, H., Han, Z., Luo, J., Radiation-induced Degradation Mechanism in Double-SOI pMOSFETs, Radiation and its Effects on Components and Systems (RADECS), 2019, France.
12. Zheng, Z. S., Zhu, H. P., Chen, X., Wang, L., Li, B.*, Gao, J. T., Li, D. L., Luo, J. J., Han, Z. S., Liu, X. Y. Liu J., Combined Effects of Tantalum Ion and Gamma Ray Irradiations on MOS Devices with Atomic Layer Deposited Al2O3 Gate Dielectrics, Radiation and its Effects on Components and Systems (RADECS), 2019, France.
13. Xiaohui Su, Bo Li*, Hainan Liu, Binhong Li, Lei Wang, Jiajun Luo, Zhengsheng Han, An SET Generation Circuit with Tunable Pulse Width, EDSSC 2019, Xi'an.
14. Xiaohui Su, Ming He, Mengxin Liu, Bo Li*, Hainan Liu, Binhong Li, Jiajun Luo, Zhengsheng Han*, An SET Pulse Widths Measurement Circuit with the Controllable Bilateral Edge Delay, ICREED 2019, Chongqing.
15. Li Duoli, Yu Meng, Zeng Chuanbin, Gao Linchun, Yan Weiwei, Li Bo*, et al, A Probabilistic Analysis Technique for Single Event Transient Sensitivity Evaluation of Phase-Lock-Loops, ESREF2019, France.
16. Fengyuan Zhang, Bo Li*, Qingzhu Zhang*, Binhong Li, Lei Wang, Yang Huang, Huaxiang Yin, Jiajun Luo, Zhengsheng Han, Xinyu Liu, Impact of Total Ionizing Dose on the Threshold Voltage of FOI FinFET with a Property of Tunable Interface Defects, NSREC 2019, San Antonio, Texas, US, July 08-12, 2019.
17. Xuewen Zhang, Lei Wang, Bo Li*, Chunjun Liang, Huimin Zhang, Chao Ji, Fulin Sun, Jianqun Yang, Xinji Li, Jiantou Gao, Binhong Li, Mengxin Liu, Yang Huang, Jiajun Luo, Zhengsheng Han, Xinyu Liu, Proton irradiation effect on high efficient organic-inorganic metal halide perovskite solar cell, NSREC 2019, San Antonio, Texas, US, July 08-12, 2019.
18. Mei Bo, Yu Qingkui, Zhang Hongwei, Tang Min, Zhao Xing, Li Bo, Zeng Chuanbin, Experimental study of single event transient characteristics on PDSOI CMOS inverter chain by pulse laser irradiation. RADECS2018, Gothenburg, Sweden, 16-21, Sept. 2018.
19. Lei Wang, Qingxuan Li, Ningyang Liu, Ligang Song, Bo Li, Binhong Li, Mengxin Liu, Yang Huang, Baoping, Zhang, Zhitao Chen, Xingzhong Cao, Baoyi Wang, Bo Mei, Comparison of 10 Mev Electron Beam Irradiation Effect on InGaN/GaN and AlGaN/GaN Multiple Quantum Well, RADECS2018, Gothenburg, Sweden, 16-21, Sept. 2018.
20. Yangyang Li, Xiaojing Li, Bo Li, Linchun Gao, Weiwei Yan, Fangfang Wang, Mei Bo, Chuanbin Zeng, Zhengsheng Han, Jiajun Luo, Radiation and Annealing Characteristics of Interface traps in SOI NMOSFETs by the Direct-Current Current-Voltage Technique, RADECS2018, Gothenburg, Sweden, 16-21, Sept. 2018.
21. Li Huang, Tianyang Zhang, Bo Li, Yu Zhang, Yuhong Zhao, Houfang Liu, Yan Cui, Xiufeng Han, The total ionizing dose effect of magnetometers system based on tunneling magnetoresistance sensor, RADECS2018, Gothenburg, Sweden, 16-21, Sept. 2018.
22. 李博，黃雲波，楊玲，郝樂，羅家�。n鄭生，堆叠纳米线围栅器件的辐射与自加热协同效应仿真研究，第三届全国辐射物理学术交流会CRPS2018.
23. Bo Li, Shuo Guo, Le Hao, Jinshun Bi, Jiajun Luo, Zhengsheng Han, The dependence of single event effect on heavy ion angular irradiation by Geant4 simulation, RADECS Workshop 2018, Beijing, 2018.05.16-18.
24. Jiantou Gao, Binhong Li, Huang Yang, Bo Li, Fazhan Zhao, Chunlin Wang, Zhihang An, Zejun Cheng, Zhengsheng Han, Jiajun Luo, Gang Guo, Jie Liu, Back gate impact on SEU Characterization of a Double SOI 4k-bit SRAM, 2018 IEEE Nuclear and Space Radiation Effects Conference (NSREC 2018), Hawaii, US, 2018.07.16-20.
25. B. Lu, J. Huo, Y. Chen, B. Li, H. N. Liu, J. J. Luo and Y. M. Zhou, XCR4C: A rad-hard full-function CDS ASIC for X-ray CCD Applications, IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC 2018, Sydney, Australia, 2018.11.10-17.
26. Bo Li, Qingzhu Zhang, Ling Yang, Yunbo Huang, Zhongshan Zheng, Binhong Li, Huiping Zhu, Mengxin Liu, Huaxiang Yin, Jiajun Luo, Zhengsheng Han and Haibin Wang, Process variation dependence of total ionizing dose effects in bulk nFinFETs, ESREF 2018, Aalborg, Denmark, 2018.10.1-5.
27. Binhong Li, Yang Huang, Jianfei Wu, Yunbo Huang, Bo Li, Qingzhu Zhang, Ling Yang, Fayu Wan, Jiajun Luo, Zhengsheng Han and Huaxiang Yin, Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment, ESREF 2018, Aalborg, Denmark, 2018.10.1-5.
28. Ling Yang, Yunbo Huang, Zhongshan Zheng, Bo Li, Binhong Li, Qingzhu Zhang, Xingyao Zhang, Huiping Zhu, Huaxiang Yin, Qi Guo, Jiajun Luo, Zhengsheng Han, Anomalous Total Dose Response and Room-Temperature Annealing Behavior in Bulk nFinFETs, 2017 Conference on Radiation and its Effects on Components and Systems, Geneva, 2017.10.2-2017.10.6
29. Yang Huang, Binhong Li, Xing Zhao, Zhongshan Zheng, Jiantou Gao, Gang Zhang, Bo Li, Guohe Zhang, Kai Tang, Zhengsheng Han , Jiajun Luo, An Effective Method to Compensate TID Induced Degradation on DSOI Structure, 2017 Conference on Radiation and its Effects on Components and Systems, Geneva, 2017.10.2-2017.10.6
30. Dian Wang, Yu-Hong Zhao, Bo Li, Bin-Hong Li and Jia-Jun Luo, The current observer design for buck converter, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, 2016, pp. 768-770.
31. Dian Wang, Yu-Hong Zhao, Bo Li*, Bin-Hong Li and Jia-Jun Luo, The current observer design for buck converter, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, 2016, pp. 768-770.
32. Bo Li, Jinshun Bi, Zhengsheng Han, Jiajun Luo, Xuefang Lin-Shi, Bruno Allard, Li Chen, A Digital Direct Controller for Buck Converter, ICSICT2014, Guilin, 2014.10.28-11.1.
33. Xuefang Lin-Shi, Bruno Allard, Jinshun Bi, Bo Li*, Stability Analysis for Integrated DC/DC Converters, ICSICT2014, Guilin, 2014.10.28-11.1.
34. Jinshun Bi, Bo Li, Zhengsheng Han, Jiajun Luo, Li Chen, Xuefang Lin-Shi, 3D TCAD Simulation of Single-event-effect in N-channel Transistor Based on Deep Sub-micron Fully-depleted Silicon-on-insulator Technology,ICSICT2014, Guilin, 2014.10.28-11.1.
35. Xie Bingqing, Luo Jiajun, Li Bo, Bi Jinshun, Bu Jianhui, Zhao Xing, Li Binhong, and Han Zhengsheng, The Effect of Cryogenic Temperature Characteristics on 0.18um Silicon-on-insulator Devices, ICREED2015, Harbin, 2015.
36. 郝樂，李博*，毕津顺，羅家�。n鄭生，CMOS電路中的單粒子瞬變效應，ICREED2015，哈爾濱，2015.
37. Li Bo, Bi Jinshun, Luo Jia-Jun, Han Zheng-Sheng, Lin-Shi Xue-Fang, Allard Bruno, An SEE Prognostic Cell Embedded Rad-hard Digital Controller for Next Generation DC-DC Converter in Space, ICREED2015, Harbin, 2015.
38. Bo Li, Xuefang Lin-Shi, Allard, B., Retif, J.-M., An FPGA Prototype of Current and Voltage Predictive Controller for High Switching Frequency Buck Converter, IECON 2012, 3024-3029, Montreal, 2012.10.25-28.
39. Bo Li, Shuibao Guo, Xuefang Lin-Shi, and Allard, B., MASH Δ-Σ DPWM Based Sliding-mode Controller Dedicating to High Frequency SMPS, EPE 2011, 1-9, Birmingham, 2011.08.30-09.1.
40. Bo Li, Shuibao Guo, Xuefang Lin-Shi, and Allard, B., Design and Implementation of the Digital Controller for Boost Converter based on FPGA, ISIE2011, 1549-1554, Gdansk, 2011.06.27-30.
41. Shuibao Guo, Xuefang Lin-Shi, Allard, B., Bo Li, Yanxia Gao, and Yi Ruan, High Resolution Digital PWM Controller for High-frequency Low-power SMPS, EPE 2009, 1-9, Barcelona, 2009.09.8-10.
42. Shuibao Guo, Xuefang Lin-Shi, Allard, B., Bo Li, Yanxia Gao, and Yi Ruan, A FPGA-prototype of a Sliding-mode-controller IC for High-switching-frequency DC-DC Converters, IECON 2009, 2895-2900, Porto, 2009.11.3-5.
1. 宿曉慧，李博，李彬鸿，黄杨，李多力，卜建辉，韓鄭生，羅家�。恢�SOI器件結構及其制備方法，201910011391.X
2. 宿曉慧，李博，李彬鸿，黄杨，李多力，卜建辉，韓鄭生，羅家�。恢�SOI器件結構及其制備方法，201910011406.2
3. 宿曉慧，李博，李彬鸿，黄杨，李多力，卜建辉，韓鄭生，羅家�。恢�SOI器件結構及其制備方法，201910011393.9
4. 徐子軒，李博，刘海南，羅家�。痘嫉缪共爸�，201711138757.7
5. 徐子軒，李博，赵博华，刘海南，羅家�。恢挚狗浯痘嫉缏返募庸谭椒�，201711137437.X
6. 王磊，李博，赵发展，韓鄭生，羅家�。跣掠睿恢值ス庾庸庠吹闹票阜椒霸骷�，201811423197.4
2019年，微電子研究所十佳先進工作者，優秀共産黨員，研究生喜愛的導師
2018年，微電子研究所優秀共産黨員，研究生喜愛的導師
2014年，微電子研究所第二屆“科研新星”一等獎
人才隊伍