尊龙凯时 - 人生就是搏!

教育背景 

工作簡曆 

1.國家自然基金青年基金項目，《累積損傷對SOI工藝集成電路電磁兼容性的影響》，項目負責人

2.基金項目，項目負責人

3.科技部留學人員回國資助基金《SOI工藝器件的熱載流子損傷》，項目負責人

4.基金項目，《電子系統電磁輻射抑制》，項目負責人

5.基金項目，《基于SOI工藝電路電磁兼容性》，項目負責人

1. Yang Huang, Binhong Li, Xing Zhao, Zhongshan Zheng, Jiantou Gao, Gang Zhang, Bo Li,Guohe Zhang, Kai Tang, Zhengsheng Han , Jiajun Luo, “An Effective Method to Compensate Total Ionizing Dose Induced Degradation on Double-SOI Structure,” Trans. on Nuclear Science (TNS), 2018. 

2. Y. Xu, H. Sun, B. Li* et al. “Essential effects on the mobility extraction reliability for organic transistors”, Advanced Functional Materials, Vol. 28, No. 42, 2018 

3. B. Li, A. Boyer, S. Ben Dhia, C. Lemoine,“Ageing effect on electromagnetic susceptibility of a phase locked loop”, Microelectronic Reliability, Vol. 50, Issues 9-11, September – November 2010, pp. 1304-1308. 

4.  B. Li, N. Berbel, A. Boyer, S. Ben Dhia, R. Fernández Garcíab, “Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences”, Microelectronic Reliability. Vol. 51, Issues 9-11, pp. 1557-1560. September 2011. 

5. A. Boyer, S. Ben Dhia, B. Li, N. Berbel, R. Fernández Garcíab, “Experimental Investigations on electrical Stress Impact on Integrated Circuit Electromagnetic Compatibility” IEEE Transaction on Electromagnetic Compatibility, Vol. PP, No. 99, February 2013. 

6.  B. Li, K. Zhao, J. Wu, X. Zhao, J. Su, J. Gao, C. Gao, J. Luo, “Electromagnetic susceptibility characterization of double SOI device”, Microelectronics Reliability, Volume 64, September 2016, Pages 168–171. 

7. J. Wu, C. Li, B. Li*, W. Zhu, H. Wang, “Microcontroller susceptibility variations to EFT burst during accelerated aging” Microelectronics Reliability, Volume 64, September 2016, Pages 210–214.